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| RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49096. Features * Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRP8120 PACKAGE TO-220AC BRAND RHRP8120 Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP8120 1200 1200 1200 8 16 100 75 20 -65 to 175 UNITS V V V A A A W mJ oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) (TC = 140oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ (c)2002 Fairchild Semiconductor Corporation RHRP8120 Rev. B RHRP8120 Electrical Specifications SYMBOL VF IF = 8A IF = 8A, TC = 150oC IR VR = 1200V VR = 1200V, TC = 150oC trr IF = 1A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse Recovery Charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse Width. D = Duty Cycle. IF = 8A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s VR = 10V, IF = 0A TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 30 20 165 25 MAX 3.2 2.6 100 500 55 70 2 UNITS V V A A ns ns ns ns nC pF oC/W Typical Performance Curves 40 IR , REVERSE CURRENT (A) 500 100 175oC IF, FORWARD CURRENT (A) 10 10 1 100oC 25oC 0.1 0.01 175oC 1 100oC 25oC 0.5 0 1 2 3 VF , FORWARD VOLTAGE (V) 4 5 0.001 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE (c)2002 Fairchild Semiconductor Corporation RHRP8120 Rev. B RHRP8120 Typical Performance Curves 60 TC = 25oC, dIF/dt = 200A/s 50 t, RECOVERY TIMES (ns) 40 t, RECOVERY TIMES (ns) 80 (Continued) 100 TC = 100oC, dIF/dt = 200A/s trr 30 20 10 0 0.5 60 trr 40 ta tb ta 20 tb 1 IF , FORWARD CURRENT (A) 4 8 1 IF , FORWARD CURRENT (A) 4 8 0 0.5 FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 120 100 t, RECOVERY TIMES (ns) 80 IF(AV) , AVERAGE FORWARD CURRENT (A) TC = 175oC, dIF/dt = 200A/s 10 8 DC 6 SQ. WAVE 4 trr 60 40 20 0 0.5 ta tb 2 1 IF , FORWARD CURRENT (A) 4 8 0 100 115 130 145 160 175 TC , CASE TEMPERATURE (oC) FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 100 CJ , JUNCTION CAPACITANCE (pF) 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2002 Fairchild Semiconductor Corporation RHRP8120 Rev. B RHRP8120 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 8. trr TEST CIRCUIT IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 9. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS (c)2002 Fairchild Semiconductor Corporation RHRP8120 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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